The use of semiconductor materials has become commonplace in a variety of electronic and optoelectronic devices. However, the demand for more flexibility in device design is spurring the research community constantly to improve upon existing materials so that they adhere to more stringent standards, and to develop new materials that can operate under a wider range of conditions. My scientific and technical interests are in the materials and surface sciences of semiconductor thin film nucleation and epitaxy using a number of growth platforms, including Molecular Beam Epitaxy (MBE), Chemical Vapor Deposition (CVD), and ion assisted deposition. A variety of characterization techniques are used to study structural (Reflection High Energy Electron Diffraction, X-Ray Diffraction, Transmission Electron Microscopy, Atomic Force Microscopy), electronic (Hall and resistivity measurements), and optical properties (photoluminescence) of these films.
The purpose of this effort is to develop a deeper understanding of the physics of the growth process in order to tailor film properties to device requirements. Current research focuses on III-V semiconductors, but these principles can be applied to other material systems such as nitrides, silicon, and magnetic materials.
