III-V compound semiconductor technology for materials and devices: molecular beam epitaxial growth and characterization of materials, as well as realization of photonic devices using these materials, such as GaN, GaAs, InP and GaSb. Basic III-V materials processing technology, device physics and design, device development and characterization, building complex photonic integrated circuits based on III-V as well as Silicon and the associated subsystems including analog coherent receivers, energy-efficient transceivers and photonic sensors; being eventually useful for both military and civilian applications.
